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| BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data * For low noise, high gain controlled input stages up to 1GHz * Operating voltage 5V 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BF 2030 Marking Ordering Code NEs Q62702-F1773 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 76 C Storage temperature Channel temperature Symbol Value 14 40 10 7 200 -55 ...+150 150 V mW C Unit V mA VDS ID I G1/2SM +VG1SE Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs 370 K/W Semiconductor Group Semiconductor Group 11 Mar-16-1998 1998-11-01 BF 2030 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 12 8.5 8.5 max. 50 50 12 0.8 0.7 - Unit V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 A, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current V nA VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSX VG2S(p) VG1S(p) A mA V VDS = 5 V, V G1S = 0 , V G2S = 4.5 V Drain-source current VDS = 5 V, V G2S = 4.5 , RG1 = 20 k Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 A Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 A AC characteristics Forward transconductance g fs - 31 - mS VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance Cg1ss - 3 - pF VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Output capacitance Cdss - 2.1 - VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure F - 2 - dB VDS = 5 V, ID = 10 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Mar-16-1998 1998-11-01 |
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